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Professor Qiao Guanjun's team published research in Advanced Functional Materials
Date:2023-12-13 | View:

Professor Qiao Guanjun's team published research in Advanced Functional Materials

Recently, the team of Professor Qiao Guanguan of our institute cooperated with Professor Zhou Chongjian of Northwest Institute of Technology, Professor Matthias Wuttig and Dr. Yu Yuan of RWTH Aachen University in Germany and other teams to publish an online paper entitled " Dual-site doping and low-angle grain boundaries lead to high thermoelectric performance in n-type Bi2S3" in Advanced Functional Materials, a top journal in the field of materials. Associate Professor Yang Jian, Ph.D. student Ye Haolin, and Associate Professor Zhang Xiangzhao are the co-first authors of the paper. Professor Liu Guiwu, Dr. Wang Li and Dr. Yu Yuan are the co-corresponding authors of the paper. The School of Materials Science and Technology of Jiangsu University is the first completion unit.

Microstructure, charge transfer analysis and thermoelectric properties of Bi2S3-based thermoelectric materials

In recent years, bismuth sulfide (Bi2S3) has been considered a promising thermoelectric material due to its large Seebeck coefficient, low thermal conductivity, and low environmental friendliness. However, the covalent bond properties of Bi2S3 and the strong Peierls distortion make its carriers strongly localized, resulting in low carrier concentration and small mobility, resulting in poor thermoelectric performance. We found that the introduction of Ag and the introduction of Cl substitution S in the Van der Waals gap of the Bi2S3 material allow the delocalized electrons provided by the embedded silver atoms to transfer the charge to the neighboring Cl atoms through the "bridge", thus increasing the carrier concentration and mobility at the same time. In addition, the high-density small-angle grain boundaries observed in the doped samples also contribute to a significant reduction in the lattice thermal conductivity of the material. Finally, the ZT value of Bi2S3 co-doped with Ag and Cl was 0.9, and the average ZT value was 0.52 at 323–676 K, both of which reached the highest level of Bi2S3-based thermoelectric materials.

The team of Professor Chen Shaoping of Taiyuan University of Technology and the team of Professor Xie Lin of Southern University of Science and Technology gave great help to the thermoelectric efficiency test and the theoretical calculation of phonon spectrum in this study.

The research was supported by the National Natural Science Foundation of China, the Natural Science Foundation of Jiangsu Province, and the Jiangsu Entrepreneurship and Entrepreneurship Team

Paper Links: https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.202306961

(S.H.)
 
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